DRD1230F40 rectifier diode ds 5978 C 1 january 2011 (ln 27997 ) 1 /7 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 1230f40 drd1230f36 drd1230f30 4 0 00 36 00 30 00 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: drd 1230f36 for a 3 6 00v device key parameters v rrm 4 000 v i f(av) 1225 a i fsm 250 00 a (see package details for further information) fig. 1 package outline
DRD1230F40 2 / 7 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 1594 a i f(rms) rms value - 2504 a i f continuous (direct) on - state current - 2295 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 1144 a i f(rms) rms value - 1797 a i f continuous (direct) on - state current - 1553 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 1225 a i f(rms) rms value - 1923 a i f continuous (direct) on - state current - 1720 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 820 a i f(rms) rms value - 1287 a i f continuous (direct) on - state current - 1050 a
- 3 - DRD1230F40 3 / 7 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 20.0 ka i 2 t i 2 t for fusing v r = 50% v rrm - ? sine 2.0 ma 2 s i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 25.0 ka i 2 t i 2 t for fusing v r = 0 3.125 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.022 c/w single side cooled anode dc - 0.038 c/w cathode dc - 0.052 c/w r th(c - h) thermal resistance C case to heatsink clamping force 1 9.5 kn double side - 0.004 c/w (with mounting compound) single side - 0.008 c/w t vj virtual junction temperature on - state (conducting) - 160 c reverse (blocking) - 150 c t stg storage temperature range - 55 1 75 c f m clamping force 18 22 kn
DRD1230F40 4 / 7 www.dynexsemi.com characteristics symbol parameter test conditions min. max. units v fm forward voltage at 34 00 a peak, t case = 25 c - 1. 6 v i rm peak reverse current at v r rm, t case = 15 0c - 75 ma q s total stored charge i f = 2 000a, di rr /dt =3 a/s - 3500 c i rr peak reverse recovery current t case = 1 5 0c, v r =100v - 110 a v to threshold voltage at t vj = 1 5 0c - 0.8 2 v r t slope resistance at t vj = 1 5 0c - 0. 29 m ? curves fig.2 maximum (limit) on - state characteristics fig.3 dissipation curves v tm equation where a = 0.658789 b = - 0.01706 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000 194 d = 0 .0 10358 these values are valid for t j = 150c for i f 5 00 a to 50 00 a
- 5 - DRD1230F40 5 / 7 www.dynexsemi.com fig.4 total stored charge fig.5 maximum reverse recovery current fig.6 surge (non - repetitive) forward current vs time (with 50% v rrm at t case 150c) fig.7 maximum (limit) transient thermal impedance - junction to case
DRD1230F40 6 / 7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. normal weight: 4 5 0g clamping force: 19.5 kn10% package outline type code: f note: some packages may be supplied with gate and or tags.
- 7 - DRD1230F40 7 / 7 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personn el. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product inform ation be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of an y kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications whe re a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touc hed when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cau se permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is co mplete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on requ est. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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